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5KP51C 15KW120A C1454 13002 MAX63 M62381FP ATMEGA 07102
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 TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T
TOSHIBA InGaAP LED
TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T
Panel Circuit Indicator
Unit in mm * * * * * * * 5 mm package InGaAP technology All plastic mold type Transparent lens High intensity light emission Excellent low current light output Applications: outdoor message signboards, safety equipment
Line-Up
Product Name TLRE20T TLRME20T TLSE20T TLOE20T TLYE20T Color Red Red Red Orange Yellow InGaAP Material
JEDEC EIAJ TOSHIBA Weight: 0.31 g

Maximum Ratings (Ta = 25C)
Product Name TLRE20T TLRME20T TLSE20T TLOE20T TLYE20T Forward Current IF (mA) 50 50 50 50 50 Reverse Voltage VR (V) 4 4 4 4 4 Power Dissipation PD (mW) 120 120 120 120 120 Operating Temperature Topr (C) -40~100 -40~100 -40~100 -40~100 -40~100 Storage Temperature Tstg (C) -40~120 -40~120 -40~120 -40~120 -40~120
1
2002-09-25
TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T
Electrical And Optical Characteristics (Ta = 25C)
Product Name ld TLRE20T TLRME20T TLSE20T TLOE20T TLYE20T Unit 630 626 613 605 587 Typ. Emission Wavelength lP (644) (636) (623) (612) (590) nm Dl 20 23 20 20 17 IF 20 20 20 20 20 mA Min 2720 2720 2720 4760 2720 Luminous Intensity IV Typ. 7000 8000 9000 10000 9500 IF 20 20 20 20 20 mA Typ. 1.9 1.9 1.9 2.0 2.0 V Forward Voltage VF Max 2.4 2.4 2.4 2.4 2.4 IF 20 20 20 20 20 mA Reverse Current IR Max 50 50 50 50 50 mA VR 4 4 4 4 4 V
mcd
Precautions
* * * Please be careful of the following: Soldering temperature: 260C max, soldering time: 3 s max (Soldering portion of lead: below the lead stopper) If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2002-09-25
TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T
TLRE20T
IF - VF
100 50 30 Ta = 25 30000 Ta = 25
IV - IF
(mcd) Luminous intensity IV
Forward current
IF (mA)
10000
10 5 3
1000
1 1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
100 1
10
100
Forward voltage
VF (V)
Forward current
IF ()
IV - Tc
3 1.0
Relative Luminous Intensity - Wavelength
IF = 20m ATa= 25
Relative luminous intensity IV
Relative luminous intensity
-20
0.8
1
0.6
0.5 0.3
0.4
0.2
0.1
0
20
40
60
80
0 580
600
620
640
660
680
700
Case temperature Tc
()
Wavelength
(nm)
Radiation Pattern Ta = 25 Allowable forward current IF (mA)
80
IF - Ta
60
20 30 40 50 60 70 80 90
10
0
10
20 30 40 50 60 70 80 90 1.0
40
20
0
0.2
0.4
0.6
0.8
0 0
20
40
60
80
100
120
Ambient temperature Ta ()
3
2002-09-25
TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T
TLRME20T
IF - VF
100 50 30 Ta = 25
50000
IV - IF
Ta = 25
IF (mA)
(mcd) Luminous intensity IV
10000
Forward current
10 5 3
1000
1 1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
100 1
10
100
Forward voltage
VF (V)
Forward current
IF ()
IV - Tc
10 1.0
Relative Luminous Intensity - Wavelength
IF = 20mA Ta = 25
Relative luminous intensity IV
Relative luminous intensity
-20
5 3
0.8
0.6
1
0.5 0.3
0.4
0.2
0.1
0
20
40
60
80
0 580
600
620
640
660
680
700
Case temperature Tc
()
Wavelength
(nm)
Radiation Pattern Ta = 25 Allowable forward current IF (mA)
80
IF - Ta
60
20 30 40 50 60 70 80 90
10
0
10
20 30 40 50 60 70 80 90 1.0
40
20
0
0.2
0.4
0.6
0.8
0 0
20
40
60
80
100
120
Ambient temperature Ta ()
4
2002-09-25
TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T
TLSE20T
IF - VF
100 50 30 Ta = 25
50000
IV - IF
Ta = 25
IF (mA)
(mcd) Luminous intensity IV
10000
Forward current
10 5 3
1000
1 1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
100 1
10
100
Forward voltage
VF (V)
Forward current
IF ()
IV - Tc
3 1.0
Relative Luminous Intensity - Wavelength
IF = 20mA Ta = 25
Relative luminous intensity IV
Relative luminous intensity
-20
0.8
1
0.6
0.5
0.4
0.3
0.2
0.1
0
20
40
60
80
0 580
600
620
640
660
680
700
Case temperature Tc
()
Wavelength
(nm)
Radiation Pattern Ta = 25 Allowable forward current IF (mA)
80
IF - Ta
60
20 30 40 50 60 70 80 90
10
0
10
20 30 40 50 60 70 80 90 1.0
40
20
0
0.2
0.4
0.6
0.8
0 0
20
40
60
80
100
120
Ambient temperature Ta ()
5
2002-09-25
TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T
TLOE20T
IF - VF
100 50 30 Ta = 25
50000
IV - IF
Ta = 25
IF (mA)
(mcd) Luminous intensity IV
10000
Forward current
10 5 3
1000
1 1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
100 1
10
100
Forward voltage
VF (V)
Forward current
IF ()
IV - Tc
3 1.0
Relative Luminous Intensity - Wavelength
IF = 20mA Ta = 25
Relative luminous intensity IV
Relative luminous intensity
0.8
1
0.6
0.5 0.3
0.4
0.2
0.1
-20
0
20
40
60
80
0 540
560
580
600
620
640
660
Case temperature Tc
()
Wavelength
(nm)
Radiation Pattern Ta = 25 Allowable forward current IF (mA)
80
IF - Ta
60
20 30 40 50 60 70 80 90
10
0
10
20 30 40 50 60 70 80 90 1.0
40
20
0
0.2
0.4
0.6
0.8
0 0
20
40
60
80
100
120
Ambient temperature Ta ()
6
2002-09-25
TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T
TLYE20T
IF - VF
100 50 30 Ta = 25
50000
IV - IF
Ta = 25
IF (mA)
(mcd) Luminous intensity IV
10000
Forward current
10 5 3
1000
1 1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
100 1
10
100
Forward voltage
VF (V)
Forward current
IF ()
IV - Tc
3 1.0
Relative Luminous Intensity - Wavelength
IF = 20mA Ta = 25
Relative luminous intensity IV
Relative luminous intensity
0.8
1
0.6
0.5 0.3
0.4
0.2
0.1
-20
0
20
40
60
80
0 540
560
580
600
620
640
660
Case temperature Tc
()
Wavelength
(nm)
Radiation Pattern Ta = 25 Allowable forward current IF (mA)
80
IF - Ta
60
20 30 40 50 60 70 80 90
10
0
10
20 30 40 50 60 70 80 90 1.0
40
20
0
0.2
0.4
0.6
0.8
0 0
20
40
60
80
100
120
Ambient temperature Ta ()
7
2002-09-25
TLRE20T,TLRME20T,TLSE20T,TLOE20T,TLYE20T
RESTRICTIONS ON PRODUCT USE
000707EAC
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
8
2002-09-25


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